Spin Polarization and Transport of Surface States in the Topological Insulators Bi2Se3 and Bi2Te3 from First Principles. Yazyev, O. V., Moore, J. E., & Louie, S. G. Physical Review Letters, 105(26):266806, 2010. ![Spin Polarization and Transport of Surface States in the Topological Insulators Bi2Se3 and Bi2Te3 from First Principles [link]](https://bibbase.org/img/filetypes/link.svg "link")
Paper doi abstract bibtex We investigate the band dispersion and the spin texture of topologically protected surface states in the bulk topological insulators Bi2Se3 and Bi2Te3 by first-principles methods. Strong spin-orbit entanglement in these materials reduces the spin polarization of the surface states to ∼50% in both cases; this reduction is absent in simple models but of important implications to essentially any spintronic application. We propose a way of controlling the magnitude of spin polarization associated with a charge current in thin films of topological insulators by means of an external electric field. The proposed dual-gate device configuration provides new possibilities for electrical control of spin.
@article{yazyev_spin_2010,
title = {Spin {Polarization} and {Transport} of {Surface} {States} in the {Topological} {Insulators} {Bi2Se3} and {Bi2Te3} from {First} {Principles}},
volume = {105},
url = {http://link.aps.org/doi/10.1103/PhysRevLett.105.266806},
doi = {10.1103/PhysRevLett.105.266806},
abstract = {We investigate the band dispersion and the spin texture of topologically protected surface states in the bulk topological insulators Bi2Se3 and Bi2Te3 by first-principles methods. Strong spin-orbit entanglement in these materials reduces the spin polarization of the surface states to ∼50\% in both cases; this reduction is absent in simple models but of important implications to essentially any spintronic application. We propose a way of controlling the magnitude of spin polarization associated with a charge current in thin films of topological insulators by means of an external electric field. The proposed dual-gate device configuration provides new possibilities for electrical control of spin.},
number = {26},
urldate = {2015-02-24},
journal = {Physical Review Letters},
author = {Yazyev, Oleg V. and Moore, Joel E. and Louie, Steven G.},
year = {2010},
pages = {266806},
}
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