The self-formatting barrier characteristics of Cu-Mg/SiO<sub>2</sub> and Cu-Ru/SiO<sub>2</sub> films for Cu interconnects. Yi, S., Jang, K., An, J., Hwang, S., & Joo, Y. Microelectronics Reliability (MR), 48(5):744-748, 2008.
The self-formatting barrier characteristics of Cu-Mg/SiO<sub>2</sub> and Cu-Ru/SiO<sub>2</sub> films for Cu interconnects [link]Paper  bibtex   
@article{ dblp3418190,
  title = {The self-formatting barrier characteristics of Cu-Mg/SiO<sub>2</sub> and Cu-Ru/SiO<sub>2</sub> films for Cu interconnects},
  author = {Seol-Min Yi and Kwang-Ho Jang and Jung-Uk An and Sang-Soo Hwang and Young-Chang Joo},
  author_short = {Yi, S. and Jang, K. and An, J. and Hwang, S. and Joo, Y.},
  bibtype = {article},
  type = {article},
  year = {2008},
  key = {dblp3418190},
  id = {dblp3418190},
  biburl = {http://www.dblp.org/rec/bibtex/journals/mr/YiJAHJ08},
  url = {http://dx.doi.org/10.1016/j.microrel.2007.12.005},
  journal = {Microelectronics Reliability (MR)},
  pages = {744-748},
  number = {5},
  volume = {48},
  text = {Microelectronics Reliability (MR) 48(5):744-748 (2008)}
}

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