Spin injection/detection using an organic-based magnetic semiconductor. Yoo, J., Chen, C., Jang, H. W., Bark, C. W., Prigodin, V. N., Eom, C. B., & Epstein, A. J. NATURE MATERIALS, 9(8):638-642, AUG, 2010. doi abstract bibtex The new paradigm of electronics, `spintronics', promises to extend the functionality of information storage and processing in conventional electronics(1). The principal spintronics device, the `spin valve', consists of two magnetic layers decoupled by a spin-transporting spacer, which allows parallel (on) and antiparallel (off) alignment of the magnetizations (spins) of the two magnetic layers. The device resistance then depends on the spin alignment controlled by the external magnetic field. In pursuit of semiconductor spintronics(2), there have been intensive efforts devoted to develop room-temperature magnetic semiconductors(3) and also to incorporate both inorganic semiconductors(4) and carbon-based materials(5-11) as the spin-transporting channels. Molecule/organic-based magnets, which allow chemical tuning of electronic and magnetic properties, are a promising new class of magnetic materials for future spintronic applications(12,13). Here, we report the realization of an organic-based magnet as an electron spin polarizer in the standard spintronics device geometry. A thin non-magnetic organic semiconductor layer and an epitaxial ferromagnetic oxide film were employed to form a hybrid magnetic tunnel junction. The results demonstrate the spin-polarizing nature of the organic-based magnetic semiconductor, vanadium(TCNE: tetracyanoethylene)(x) (x similar to 2; T(c) similar to 400 K), and its function as a spin injector/detector in hybrid magnetic multilayer devices.
@article{ ISI:000280245000019,
Author = {Yoo, Jung-Woo and Chen, Chia-Yi and Jang, H. W. and Bark, C. W. and
Prigodin, V. N. and Eom, C. B. and Epstein, A. J.},
Title = {{Spin injection/detection using an organic-based magnetic semiconductor}},
Journal = {{NATURE MATERIALS}},
Year = {{2010}},
Volume = {{9}},
Number = {{8}},
Pages = {{638-642}},
Month = {{AUG}},
Abstract = {{The new paradigm of electronics, `spintronics', promises to extend the
functionality of information storage and processing in conventional
electronics(1). The principal spintronics device, the `spin valve',
consists of two magnetic layers decoupled by a spin-transporting spacer,
which allows parallel (on) and antiparallel (off) alignment of the
magnetizations (spins) of the two magnetic layers. The device resistance
then depends on the spin alignment controlled by the external magnetic
field. In pursuit of semiconductor spintronics(2), there have been
intensive efforts devoted to develop room-temperature magnetic
semiconductors(3) and also to incorporate both inorganic
semiconductors(4) and carbon-based materials(5-11) as the
spin-transporting channels. Molecule/organic-based magnets, which allow
chemical tuning of electronic and magnetic properties, are a promising
new class of magnetic materials for future spintronic
applications(12,13). Here, we report the realization of an organic-based
magnet as an electron spin polarizer in the standard spintronics device
geometry. A thin non-magnetic organic semiconductor layer and an
epitaxial ferromagnetic oxide film were employed to form a hybrid
magnetic tunnel junction. The results demonstrate the spin-polarizing
nature of the organic-based magnetic semiconductor, vanadium(TCNE:
tetracyanoethylene)(x) (x similar to 2; T(c) similar to 400 K), and its
function as a spin injector/detector in hybrid magnetic multilayer
devices.}},
DOI = {{10.1038/NMAT2797}},
ISSN = {{1476-1122}},
ResearcherID-Numbers = {{Bark, Chung Wung/B-9534-2014
Yoo, Jung-Woo/F-9288-2011
Eom, Chang-Beom/I-5567-2014
Jang, Ho Won/D-9866-2011}},
ORCID-Numbers = {{Bark, Chung Wung/0000-0002-9394-4240
Jang, Ho Won/0000-0002-6952-7359}},
Unique-ID = {{ISI:000280245000019}},
}
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The principal spintronics device, the `spin valve', consists of two magnetic layers decoupled by a spin-transporting spacer, which allows parallel (on) and antiparallel (off) alignment of the magnetizations (spins) of the two magnetic layers. The device resistance then depends on the spin alignment controlled by the external magnetic field. In pursuit of semiconductor spintronics(2), there have been intensive efforts devoted to develop room-temperature magnetic semiconductors(3) and also to incorporate both inorganic semiconductors(4) and carbon-based materials(5-11) as the spin-transporting channels. Molecule/organic-based magnets, which allow chemical tuning of electronic and magnetic properties, are a promising new class of magnetic materials for future spintronic applications(12,13). Here, we report the realization of an organic-based magnet as an electron spin polarizer in the standard spintronics device geometry. A thin non-magnetic organic semiconductor layer and an epitaxial ferromagnetic oxide film were employed to form a hybrid magnetic tunnel junction. The results demonstrate the spin-polarizing nature of the organic-based magnetic semiconductor, vanadium(TCNE: tetracyanoethylene)(x) (x similar to 2; T(c) similar to 400 K), and its function as a spin injector/detector in hybrid magnetic multilayer devices.","doi":"10.1038/NMAT2797","issn":"1476-1122","researcherid-numbers":"Bark, Chung Wung/B-9534-2014 Yoo, Jung-Woo/F-9288-2011 Eom, Chang-Beom/I-5567-2014 Jang, Ho Won/D-9866-2011","orcid-numbers":"Bark, Chung Wung/0000-0002-9394-4240 Jang, Ho Won/0000-0002-6952-7359","unique-id":"ISI:000280245000019","bibtex":"@article{ ISI:000280245000019,\nAuthor = {Yoo, Jung-Woo and Chen, Chia-Yi and Jang, H. W. and Bark, C. W. and\n Prigodin, V. N. and Eom, C. B. and Epstein, A. J.},\nTitle = {{Spin injection/detection using an organic-based magnetic semiconductor}},\nJournal = {{NATURE MATERIALS}},\nYear = {{2010}},\nVolume = {{9}},\nNumber = {{8}},\nPages = {{638-642}},\nMonth = {{AUG}},\nAbstract = {{The new paradigm of electronics, `spintronics', promises to extend the\n functionality of information storage and processing in conventional\n electronics(1). The principal spintronics device, the `spin valve',\n consists of two magnetic layers decoupled by a spin-transporting spacer,\n which allows parallel (on) and antiparallel (off) alignment of the\n magnetizations (spins) of the two magnetic layers. The device resistance\n then depends on the spin alignment controlled by the external magnetic\n field. In pursuit of semiconductor spintronics(2), there have been\n intensive efforts devoted to develop room-temperature magnetic\n semiconductors(3) and also to incorporate both inorganic\n semiconductors(4) and carbon-based materials(5-11) as the\n spin-transporting channels. Molecule/organic-based magnets, which allow\n chemical tuning of electronic and magnetic properties, are a promising\n new class of magnetic materials for future spintronic\n applications(12,13). Here, we report the realization of an organic-based\n magnet as an electron spin polarizer in the standard spintronics device\n geometry. A thin non-magnetic organic semiconductor layer and an\n epitaxial ferromagnetic oxide film were employed to form a hybrid\n magnetic tunnel junction. 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