Spin injection/detection using an organic-based magnetic semiconductor. Yoo, J., Chen, C., Jang, H. W., Bark, C. W., Prigodin, V. N., Eom, C. B., & Epstein, A. J. NATURE MATERIALS, 9(8):638-642, AUG, 2010.
doi  abstract   bibtex   
The new paradigm of electronics, `spintronics', promises to extend the functionality of information storage and processing in conventional electronics(1). The principal spintronics device, the `spin valve', consists of two magnetic layers decoupled by a spin-transporting spacer, which allows parallel (on) and antiparallel (off) alignment of the magnetizations (spins) of the two magnetic layers. The device resistance then depends on the spin alignment controlled by the external magnetic field. In pursuit of semiconductor spintronics(2), there have been intensive efforts devoted to develop room-temperature magnetic semiconductors(3) and also to incorporate both inorganic semiconductors(4) and carbon-based materials(5-11) as the spin-transporting channels. Molecule/organic-based magnets, which allow chemical tuning of electronic and magnetic properties, are a promising new class of magnetic materials for future spintronic applications(12,13). Here, we report the realization of an organic-based magnet as an electron spin polarizer in the standard spintronics device geometry. A thin non-magnetic organic semiconductor layer and an epitaxial ferromagnetic oxide film were employed to form a hybrid magnetic tunnel junction. The results demonstrate the spin-polarizing nature of the organic-based magnetic semiconductor, vanadium(TCNE: tetracyanoethylene)(x) (x similar to 2; T(c) similar to 400 K), and its function as a spin injector/detector in hybrid magnetic multilayer devices.
@article{ ISI:000280245000019,
Author = {Yoo, Jung-Woo and Chen, Chia-Yi and Jang, H. W. and Bark, C. W. and
   Prigodin, V. N. and Eom, C. B. and Epstein, A. J.},
Title = {{Spin injection/detection using an organic-based magnetic semiconductor}},
Journal = {{NATURE MATERIALS}},
Year = {{2010}},
Volume = {{9}},
Number = {{8}},
Pages = {{638-642}},
Month = {{AUG}},
Abstract = {{The new paradigm of electronics, `spintronics', promises to extend the
   functionality of information storage and processing in conventional
   electronics(1). The principal spintronics device, the `spin valve',
   consists of two magnetic layers decoupled by a spin-transporting spacer,
   which allows parallel (on) and antiparallel (off) alignment of the
   magnetizations (spins) of the two magnetic layers. The device resistance
   then depends on the spin alignment controlled by the external magnetic
   field. In pursuit of semiconductor spintronics(2), there have been
   intensive efforts devoted to develop room-temperature magnetic
   semiconductors(3) and also to incorporate both inorganic
   semiconductors(4) and carbon-based materials(5-11) as the
   spin-transporting channels. Molecule/organic-based magnets, which allow
   chemical tuning of electronic and magnetic properties, are a promising
   new class of magnetic materials for future spintronic
   applications(12,13). Here, we report the realization of an organic-based
   magnet as an electron spin polarizer in the standard spintronics device
   geometry. A thin non-magnetic organic semiconductor layer and an
   epitaxial ferromagnetic oxide film were employed to form a hybrid
   magnetic tunnel junction. The results demonstrate the spin-polarizing
   nature of the organic-based magnetic semiconductor, vanadium(TCNE:
   tetracyanoethylene)(x) (x similar to 2; T(c) similar to 400 K), and its
   function as a spin injector/detector in hybrid magnetic multilayer
   devices.}},
DOI = {{10.1038/NMAT2797}},
ISSN = {{1476-1122}},
ResearcherID-Numbers = {{Bark, Chung Wung/B-9534-2014
   Yoo, Jung-Woo/F-9288-2011
   Eom, Chang-Beom/I-5567-2014
   Jang, Ho Won/D-9866-2011}},
ORCID-Numbers = {{Bark, Chung Wung/0000-0002-9394-4240
   Jang, Ho Won/0000-0002-6952-7359}},
Unique-ID = {{ISI:000280245000019}},
}

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