@article{ ISI:000275779600004,
Author = {Yoo, Jung-Woo and Jang, H. W. and Prigodin, V. N. and Kao, C. and Eom,
   C. B. and Epstein, A. J.},
Title = {{Tunneling vs. giant magnetoresistance in organic spin valve}},
Journal = {{SYNTHETIC METALS}},
Year = {{2010}},
Volume = {{160}},
Number = {{3-4, SI}},
Pages = {{216-222}},
Month = {{FEB}},
Abstract = {{We studied magnetoresistance (MR) in La2/3Sr1/3MnO3 (LSMO)/organic
   semiconductoi-(OSC)/Fe hetero-junction devices using rubrene (C42H28) as
   an organic semiconductor. Efficient spin polarized tunneling using a
   hybrid barrier(oxide (1.2 nm)/rubrene (5 nm)) was observed. Devices with
   a thin layer of rubrene as the barrier may have magnetic clusters and/or
   pinholes in the barrier, which could explain significant variations of
   MR among devices. As the thickness of the rubrene layer is increased,
   device current becomes strongly limited by carrier injection resulting
   in strong temperature and bias dependent device resistance. The carrier
   injection in these devices can be described with thermionic field
   emission at the metal/OSC interface and is analyzed with both empirical
   and theoretical models. The effect of carrier transport through the
   spacer on the magnetoresistance for organic-based spin valve is
   discussed. The observed giant magnetoresistance (GMR) in 20 nm rubrene
   device demonstrates the spin polarized carrier injection and transport
   through the rubrene OSC layer. (C) 2009 Elsevier B.V. All rights
   reserved.}},
DOI = {{10.1016/j.synthmet.2009.11.019}},
ISSN = {{0379-6779}},
ResearcherID-Numbers = {{Eom, Chang-Beom/I-5567-2014
   Yoo, Jung-Woo/F-9288-2011
   Jang, Ho Won/D-9866-2011}},
ORCID-Numbers = {{Jang, Ho Won/0000-0002-6952-7359}},
Unique-ID = {{ISI:000275779600004}},
}

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