Dry Etching Behaviors of ZnO and Al2O3 Films in the Fabrication of Transparent Oxide TFT for AMOLED Display Application. Yoon, S M, Hwang, C S, Park, S H K., Chu, H Y, & Cho, K I abstract bibtex We provide a newly developed dry etching process for the fabrication of ZnO-based oxide TFTs. The etching characteristics of ZnO (active layer) and Al2O3 (gate insulator) thin films were systematically investigated when the etching gas mixtures and their mixing ratios were varied in the heliconplasma etching system.
@article{yoon_dry_nodate,
title = {Dry {Etching} {Behaviors} of {ZnO} and {Al2O3} {Films} in the {Fabrication} of {Transparent} {Oxide} {TFT} for {AMOLED} {Display} {Application}},
abstract = {We provide a newly developed dry etching process for the fabrication of ZnO-based oxide TFTs. The etching characteristics of ZnO (active layer) and Al2O3 (gate insulator) thin films were systematically investigated when the etching gas mixtures and their mixing ratios were varied in the heliconplasma etching system.},
language = {en},
author = {Yoon, S M and Hwang, C S and Park, S H Ko and Chu, H Y and Cho, K I},
pages = {4}
}
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