Nitrogen doped TiO2 photocatalyst prepared by low energy N+ implantation technique. Yoshida, T. & Kuda, E. In E.M. Gaigneaux, S. H. & P. Ruiz, M. D., editors, Studies in Surface Science and Catalysis, volume 175, of Scientific Bases for the Preparation of Heterogeneous Catalysts Proceedings of the 10th International Symposium, Louvain-la-Neuve, Belgium, July 11-15, 2010, pages 267--270. Elsevier, 2010.
Paper abstract bibtex A nitrogen doped TiO2 as a visible-light response photocatalyst was prepared by low energy N+ implantation technique. N+ -implanted TiO2 samples promoted the photocatalytic activity for degradation of methylene blue under visible-light irradiation. N 1s XPS and N K-edge XANES spectra of the photocatalytically active sample indicated that N replaces the O sites near the surface, whereas in the inactive samples N-O species are formed. We also found that the nitrogen concentration of the sample implanted with small amount of N+ (1 × 1021 m -2) is a little higher than that with large amount of N+ (3 × 1021 m-2). In the low energy (5 keV) N+ implantation, the sputtering of the sample atoms would be one of the important processes for controlling both the concentration and chemical state of the doped nitrogen.
@incollection{yoshida_nitrogen_2010,
series = {Scientific {Bases} for the {Preparation} of {Heterogeneous} {Catalysts} {Proceedings} of the 10th {International} {Symposium}, {Louvain}-la-{Neuve}, {Belgium}, {July} 11-15, 2010},
title = {Nitrogen doped {TiO}2 photocatalyst prepared by low energy {N}+ implantation technique},
volume = {175},
url = {http://www.sciencedirect.com/science/article/pii/S0167299110750394},
abstract = {A nitrogen doped TiO2 as a visible-light response photocatalyst was prepared by low energy N+ implantation technique. N+ -implanted TiO2 samples promoted the photocatalytic activity for degradation of methylene blue under visible-light irradiation. N 1s XPS and N K-edge XANES spectra of the photocatalytically active sample indicated that N replaces the O sites near the surface, whereas in the inactive samples N-O species are formed. We also found that the nitrogen concentration of the sample implanted with small amount of N+ (1 × 1021 m -2) is a little higher than that with large amount of N+ (3 × 1021 m-2). In the low energy (5 keV) N+ implantation, the sputtering of the sample atoms would be one of the important processes for controlling both the concentration and chemical state of the doped nitrogen.},
urldate = {2015-01-04TZ},
booktitle = {Studies in {Surface} {Science} and {Catalysis}},
publisher = {Elsevier},
author = {Yoshida, Tomoko and Kuda, Eriko},
editor = {E.M. Gaigneaux, S. Hermans, P. A. Jacobs, J. A. Martens {and} P. Ruiz, M. Devillers},
year = {2010},
keywords = {N-doped TiO2 photocatalyst, XANES, ion implantation, visible light response},
pages = {267--270}
}
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