Method to extract parameters of power law for nano-scale SiON pMOSFETs under negative bias temperature instability. Yun, Y., Kim, G., Seo, J., Son, D., & Kang, B. Microelectronics Reliability, 88-90:191-195, 2018.
Method to extract parameters of power law for nano-scale SiON pMOSFETs under negative bias temperature instability. [link]Link  Method to extract parameters of power law for nano-scale SiON pMOSFETs under negative bias temperature instability. [link]Paper  bibtex   
@article{journals/mr/YunKSSK18,
  added-at = {2019-01-07T00:00:00.000+0100},
  author = {Yun, Yeohyeok and Kim, Gang-Jun and Seo, Ji-Hoon and Son, Donghee and Kang, Bongkoo},
  biburl = {https://www.bibsonomy.org/bibtex/2c929894b601b55a91d308ca16f5385f2/dblp},
  ee = {https://doi.org/10.1016/j.microrel.2018.07.056},
  interhash = {0879d6ab00f2b52d669950e123b7a26f},
  intrahash = {c929894b601b55a91d308ca16f5385f2},
  journal = {Microelectronics Reliability},
  keywords = {dblp},
  pages = {191-195},
  timestamp = {2019-01-08T11:37:57.000+0100},
  title = {Method to extract parameters of power law for nano-scale SiON pMOSFETs under negative bias temperature instability.},
  url = {http://dblp.uni-trier.de/db/journals/mr/mr88.html#YunKSSK18},
  volume = {88-90},
  year = 2018
}
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