Phase transitions in BaTiO$_{\textrm{3}}$ thin films and BaTiO$_{\textrm{3}}$/BaZrO$_{\textrm{3}}$ superlattices. Yuzyuk, Y. I., Sakhovoy, R. A., Maslova, O. A., Shirokov, V. B., Zakharchenko, I. N., Belhadi, J., & El Marssi, M. Journal of Applied Physics, 116(18):184102, November, 2014.
Phase transitions in BaTiO$_{\textrm{3}}$ thin films and BaTiO$_{\textrm{3}}$/BaZrO$_{\textrm{3}}$ superlattices [link]Paper  doi  abstract   bibtex   
Using pulsed laser deposition, we grew a ferroelectric [BaTiO3]Λ/2/[BaZrO3]Λ/2 (BT/BZ) superlattice with a stacking periodicity of Λ = 256 Å and a BT single film on a La1/2Sr1/2CoO3-buffered (001)MgO substrate, and then studied the phase transitions of these materials. At room temperature, the polarized Raman spectra of the BT film corresponded to a ferroelectric orthorhombic C2V14 phase with the polar axis oriented in the plane of the substrate. A ferroelectric-paraelectric phase transition in the BT film occurred at ∼450 K. Upon cooling to ∼300 K, a phase transition to the monoclinic Cs3 phase occurred. These experimental results agree well with a theoretical “temperature-misfit strain” phase diagram of the BT film. We found no evidence of phase transitions in the BT/BZ superlattice below room temperature. The phase transition to the paraelectric phase in the BT/BZ superlattice increased in temperature because of lattice mismatch between the BT and BZ layers. A desirable Curie temperature can be tailored rather precisely by varying the layer thicknesses or the BT/BZ ratio in the superlattice. The BT/BZ superlattices are very good for device applications because their ferroelectric phase with in-plane polarization can remain stable at least from 0 K up to 723 K, and even at higher temperatures in superlattices with smaller periodicities.
@article{yuzyuk_phase_2014,
	title = {Phase transitions in {BaTiO}$_{\textrm{3}}$ thin films and {BaTiO}$_{\textrm{3}}$/{BaZrO}$_{\textrm{3}}$ superlattices},
	volume = {116},
	issn = {0021-8979},
	url = {https://doi.org/10.1063/1.4901207},
	doi = {10.1063/1.4901207},
	abstract = {Using pulsed laser deposition, we grew a ferroelectric [BaTiO3]Λ/2/[BaZrO3]Λ/2 (BT/BZ) superlattice with a stacking periodicity of Λ = 256 Å and a BT single film on a La1/2Sr1/2CoO3-buffered (001)MgO substrate, and then studied the phase transitions of these materials. At room temperature, the polarized Raman spectra of the BT film corresponded to a ferroelectric orthorhombic C2V14 phase with the polar axis oriented in the plane of the substrate. A ferroelectric-paraelectric phase transition in the BT film occurred at ∼450 K. Upon cooling to ∼300 K, a phase transition to the monoclinic Cs3 phase occurred. These experimental results agree well with a theoretical “temperature-misfit strain” phase diagram of the BT film. We found no evidence of phase transitions in the BT/BZ superlattice below room temperature. The phase transition to the paraelectric phase in the BT/BZ superlattice increased in temperature because of lattice mismatch between the BT and BZ layers. A desirable Curie temperature can be tailored rather precisely by varying the layer thicknesses or the BT/BZ ratio in the superlattice. The BT/BZ superlattices are very good for device applications because their ferroelectric phase with in-plane polarization can remain stable at least from 0 K up to 723 K, and even at higher temperatures in superlattices with smaller periodicities.},
	number = {18},
	urldate = {2023-11-11},
	journal = {Journal of Applied Physics},
	author = {Yuzyuk, Yu. I. and Sakhovoy, R. A. and Maslova, O. A. and Shirokov, V. B. and Zakharchenko, I. N. and Belhadi, J. and El Marssi, M.},
	month = nov,
	year = {2014},
	pages = {184102},
}

Downloads: 0