@article{yuzyuk_ferroelectric_2010,
	title = {Ferroelectric {Q}-phase in a {NaNbO3} epitaxial thin film},
	volume = {96},
	issn = {0003-6951},
	url = {https://doi.org/10.1063/1.3437090},
	doi = {10.1063/1.3437090},
	abstract = {Epitaxial NaNbO3 thin films have been grown by pulsed laser deposition on cubic (00l) MgO substrate with epitaxial (La0.5Sr0.5)CoO3 buffer layer. Micro-Raman spectroscopy studies revealed that the ferroelectric Q phase (Pmc21, Z=4) is stable in a 250-nm-thick film in contrast to the antiferroelectric phase P (Pbma, Z=8) known to exist in the bulk single crystals and ceramics of undoped stoichiometric NaNbO3. Temperature-dependent Raman spectra indicate that the Q phase is stable over a wide temperature range (at least from 80 to 600 K), while the low-temperature ferroelectric rhombohedral phase N, typical for NaNbO3 single crystals, is not observed.},
	number = {22},
	urldate = {2023-11-11},
	journal = {Applied Physics Letters},
	author = {Yuzyuk, Yu. I. and Shakhovoy, R. A. and Raevskaya, S. I. and Raevski, I. P. and El Marssi, M. and Karkut, M. G. and Simon, P.},
	month = jun,
	year = {2010},
	pages = {222904},
}

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