{"_id":"xJRszJbaGY5HDBnrG","bibbaseid":"yuzyuk-shakhovoy-raevskaya-raevski-elmarssi-karkut-simon-ferroelectricqphaseinananbo3epitaxialthinfilm-2010","author_short":["Yuzyuk, Y. I.","Shakhovoy, R. A.","Raevskaya, S. I.","Raevski, I. P.","El Marssi, M.","Karkut, M. G.","Simon, P."],"bibdata":{"bibtype":"article","type":"article","title":"Ferroelectric Q-phase in a NaNbO3 epitaxial thin film","volume":"96","issn":"0003-6951","url":"https://doi.org/10.1063/1.3437090","doi":"10.1063/1.3437090","abstract":"Epitaxial NaNbO3 thin films have been grown by pulsed laser deposition on cubic (00l) MgO substrate with epitaxial (La0.5Sr0.5)CoO3 buffer layer. Micro-Raman spectroscopy studies revealed that the ferroelectric Q phase (Pmc21, Z=4) is stable in a 250-nm-thick film in contrast to the antiferroelectric phase P (Pbma, Z=8) known to exist in the bulk single crystals and ceramics of undoped stoichiometric NaNbO3. Temperature-dependent Raman spectra indicate that the Q phase is stable over a wide temperature range (at least from 80 to 600 K), while the low-temperature ferroelectric rhombohedral phase N, typical for NaNbO3 single crystals, is not observed.","number":"22","urldate":"2023-11-11","journal":"Applied Physics Letters","author":[{"propositions":[],"lastnames":["Yuzyuk"],"firstnames":["Yu.","I."],"suffixes":[]},{"propositions":[],"lastnames":["Shakhovoy"],"firstnames":["R.","A."],"suffixes":[]},{"propositions":[],"lastnames":["Raevskaya"],"firstnames":["S.","I."],"suffixes":[]},{"propositions":[],"lastnames":["Raevski"],"firstnames":["I.","P."],"suffixes":[]},{"propositions":[],"lastnames":["El","Marssi"],"firstnames":["M."],"suffixes":[]},{"propositions":[],"lastnames":["Karkut"],"firstnames":["M.","G."],"suffixes":[]},{"propositions":[],"lastnames":["Simon"],"firstnames":["P."],"suffixes":[]}],"month":"June","year":"2010","pages":"222904","bibtex":"@article{yuzyuk_ferroelectric_2010,\n\ttitle = {Ferroelectric {Q}-phase in a {NaNbO3} epitaxial thin film},\n\tvolume = {96},\n\tissn = {0003-6951},\n\turl = {https://doi.org/10.1063/1.3437090},\n\tdoi = {10.1063/1.3437090},\n\tabstract = {Epitaxial NaNbO3 thin films have been grown by pulsed laser deposition on cubic (00l) MgO substrate with epitaxial (La0.5Sr0.5)CoO3 buffer layer. Micro-Raman spectroscopy studies revealed that the ferroelectric Q phase (Pmc21, Z=4) is stable in a 250-nm-thick film in contrast to the antiferroelectric phase P (Pbma, Z=8) known to exist in the bulk single crystals and ceramics of undoped stoichiometric NaNbO3. Temperature-dependent Raman spectra indicate that the Q phase is stable over a wide temperature range (at least from 80 to 600 K), while the low-temperature ferroelectric rhombohedral phase N, typical for NaNbO3 single crystals, is not observed.},\n\tnumber = {22},\n\turldate = {2023-11-11},\n\tjournal = {Applied Physics Letters},\n\tauthor = {Yuzyuk, Yu. I. and Shakhovoy, R. A. and Raevskaya, S. I. and Raevski, I. P. and El Marssi, M. and Karkut, M. G. and Simon, P.},\n\tmonth = jun,\n\tyear = {2010},\n\tpages = {222904},\n}\n\n\n\n\n\n\n\n\n\n\n\n","author_short":["Yuzyuk, Y. I.","Shakhovoy, R. A.","Raevskaya, S. I.","Raevski, I. P.","El Marssi, M.","Karkut, M. G.","Simon, P."],"key":"yuzyuk_ferroelectric_2010","id":"yuzyuk_ferroelectric_2010","bibbaseid":"yuzyuk-shakhovoy-raevskaya-raevski-elmarssi-karkut-simon-ferroelectricqphaseinananbo3epitaxialthinfilm-2010","role":"author","urls":{"Paper":"https://doi.org/10.1063/1.3437090"},"metadata":{"authorlinks":{}},"html":""},"bibtype":"article","biburl":"https://bibbase.org/zotero/Mihey87","dataSources":["t334MWsk8W74r2QJi","XXMPhKJLn3LzRFzbL","5vfT7chqyKSuztznA","EotKB7sk8uWbfvCNP","prFTW7rEBBSfixaBo"],"keywords":[],"search_terms":["ferroelectric","phase","nanbo3","epitaxial","thin","film","yuzyuk","shakhovoy","raevskaya","raevski","el marssi","karkut","simon"],"title":"Ferroelectric Q-phase in a NaNbO3 epitaxial thin film","year":2010}