Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation

Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation. Zauner, A. R., Weyher, J. L., Plomp, M., Kirilyuk, V., Grzegory, I., Van Enckevort, W. J., Schermer, J. J., Hageman, P. R., & Larsen, P. K. Journal of Crystal Growth, 210(4):435–443, 2000. Publisher: Elsevier Science B.V.
doi abstract bibtex

GaN single crystals were used as substrates for MOCVD growth. The (0001̄) plane of the substrate crystals was polished to obtain off-angle orientations of 0, 2, and 4° towards the [101̄0] direction. The highest misorientation resulted in a reduction of the hexagonal hillock density by nearly two orders of magnitude as compared with homo-epitaxial films grown on the exact (0001̄) surface. The features that are still found on the 4° off-angle sample after growth can be explained by a model involving the interaction of steps, introduced by the misorientation, and the hexagonal hillocks during the growth process. Following from this explanation it could be concluded that surface diffusion is found to be not important during growth on the N-side. The material quality of the N-side was examined by photoluminescence (PL) measurements. The PL spectrum measured at 5 K shows dominant donor bound excitons with a FWHM of 1.4 meV as well as free excitonic transitions.

@article{zauner_homo-epitaxial_2000,
	title = {Homo-epitaxial {GaN} growth on exact and misoriented single crystals: suppression of hillock formation},
	volume = {210},
	issn = {00220248},
	doi = {10.1016/S0022-0248(99)00886-6},
	abstract = {GaN single crystals were used as substrates for MOCVD growth. The (0001̄) plane of the substrate crystals was polished to obtain off-angle orientations of 0, 2, and 4° towards the [101̄0] direction. The highest misorientation resulted in a reduction of the hexagonal hillock density by nearly two orders of magnitude as compared with homo-epitaxial films grown on the exact (0001̄) surface. The features that are still found on the 4° off-angle sample after growth can be explained by a model involving the interaction of steps, introduced by the misorientation, and the hexagonal hillocks during the growth process. Following from this explanation it could be concluded that surface diffusion is found to be not important during growth on the N-side. The material quality of the N-side was examined by photoluminescence (PL) measurements. The PL spectrum measured at 5 K shows dominant donor bound excitons with a FWHM of 1.4 meV as well as free excitonic transitions.},
	number = {4},
	urldate = {2022-08-12},
	journal = {Journal of Crystal Growth},
	author = {Zauner, A. R.A. and Weyher, J. L. and Plomp, M. and Kirilyuk, V. and Grzegory, I. and Van Enckevort, W. J.P. and Schermer, J. J. and Hageman, P. R. and Larsen, P. K.},
	year = {2000},
	note = {Publisher: Elsevier Science B.V.},
	keywords = {MOCVD},
	pages = {435--443},
}

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The (0001̄) plane of the substrate crystals was polished to obtain off-angle orientations of 0, 2, and 4° towards the [101̄0] direction. The highest misorientation resulted in a reduction of the hexagonal hillock density by nearly two orders of magnitude as compared with homo-epitaxial films grown on the exact (0001̄) surface. The features that are still found on the 4° off-angle sample after growth can be explained by a model involving the interaction of steps, introduced by the misorientation, and the hexagonal hillocks during the growth process. Following from this explanation it could be concluded that surface diffusion is found to be not important during growth on the N-side. The material quality of the N-side was examined by photoluminescence (PL) measurements. 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