ErAs : InGaAs/InGaAlAs superlattice thin-film power generator array

ErAs : InGaAs/InGaAlAs superlattice thin-film power generator array. Zeng, G. H., Bowers, J. E., Zide, J. M. O., Gossard, A. C., Kim, W., Singer, S., Majumdar, A., Singh, R., Bian, Z., Zhang, Y., & Shakouri, A. Applied Physics Letters, 2006-03-01, 2006.

Paper abstract bibtex

We report a wafer scale approach for the fabrication of thin-film power generators composed of arrays of 400 p and n type ErAs:InGaAs/InGaAlAs superlattice thermoelectric elements. The elements incorporate ErAs metallic nanoparticles into the semiconductor superlattice structure to provide charge carriers and create scattering centers for phonons. p- and n-type ErAs:InGaAs/InGaAlAs superlattices with a total thickness of 5 mu m were grown on InP substrate using molecular beam epitaxy. The cross-plane Seebeck coefficients and cross-plane thermal conductivity of the superlattice were measured using test pattern devices and the 3 omega method, respectively. Four hundred element power generators were fabricated from these 5 mu m thick, 200 mu mx200 mu m in area superlattice elements. The output power was over 0.7 mW for an external resistor of 100 Omega with a 30 K temperature difference drop across the generator. We discuss the limitations to the generator performance and provide suggestions for improvements. (c) 2006 American Institute of Physics.

@article {669,
	title = {ErAs : InGaAs/InGaAlAs superlattice thin-film power generator array},
	journal = {Applied Physics Letters},
	volume = {88},
	year = {2006},
	month = {2006-03-01},
	abstract = {We report a wafer scale approach for the fabrication of thin-film power generators composed of arrays of 400 p and n type ErAs:InGaAs/InGaAlAs superlattice thermoelectric elements. The elements incorporate ErAs metallic nanoparticles into the semiconductor superlattice structure to provide charge carriers and create scattering centers for phonons. p- and n-type ErAs:InGaAs/InGaAlAs superlattices with a total thickness of 5 mu m were grown on InP substrate using molecular beam epitaxy. The cross-plane Seebeck coefficients and cross-plane thermal conductivity of the superlattice were measured using test pattern devices and the 3 omega method, respectively. Four hundred element power generators were fabricated from these 5 mu m thick, 200 mu mx200 mu m in area superlattice elements. The output power was over 0.7 mW for an external resistor of 100 Omega with a 30 K temperature difference drop across the generator. We discuss the limitations to the generator performance and provide suggestions for improvements. (c) 2006 American Institute of Physics.},
	isbn = {0003-6951},
	url = {http://escholarship.org/uc/item/4vg8n11q},
	author = {Zeng, G. H. and Bowers, J. E. and Zide, J. M. O. and Gossard, A. C. and Kim, W. and Singer, S. and Majumdar, A. and Singh, R. and Bian, Z. and Zhang, Y. and Shakouri, A.}
}

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