Cross-plane Seebeck coefficient of ErAs:InGaAs/InGaAlAs superlattices. Zeng, G., Zide, J. M. O., Kim, W., Bowers, J. E., Gossard, A. C., Bian, Z., Zhang, Y., Shakouri, A., Singer, S. L., & Majumdar, A. *Journal of Applied Physics*, 101:034502, 2007/02/01, 2007. Paper abstract bibtex We characterize cross-plane and in-plane Seebeck coefficients for Er As : In Ga As / In Ga Al As superlattices with different carrier concentrations using test patterns integrated with microheaters. The microheater creates a local temperature difference, and the cross-plane Seebeck coefficients of the superlattices are determined by a combination of experimental measurements and finite element simulations. The cross-plane Seebeck coefficients are compared to the in-plane Seebeck coefficients and a significant increase in the cross-plane Seebeck coefficient over the in-plane Seebeck coefficient is observed. Differences between cross-plane and in-plane Seebeck coefficients decrease as the carrier concentration increases, which is indicative of heterostructurethermionic emission in the cross-plane direction.

@article {559,
title = {Cross-plane Seebeck coefficient of ErAs:InGaAs/InGaAlAs superlattices},
journal = {Journal of Applied Physics},
volume = {101},
year = {2007},
month = {2007/02/01},
pages = {034502},
abstract = {We characterize cross-plane and in-plane Seebeck coefficients for Er As : In Ga As / In Ga Al As superlattices with different carrier concentrations using test patterns integrated with microheaters. The microheater creates a local temperature difference, and the cross-plane Seebeck coefficients of the superlattices are determined by a combination of experimental measurements and finite element simulations. The cross-plane Seebeck coefficients are compared to the in-plane Seebeck coefficients and a significant increase in the cross-plane Seebeck coefficient over the in-plane Seebeck coefficient is observed. Differences between cross-plane and in-plane Seebeck coefficients decrease as the carrier concentration increases, which is indicative of heterostructurethermionic emission in the cross-plane direction.},
keywords = {Carrier density, Conduction bands, III-V semiconductors, Superlattices, Thermal conductivity},
isbn = {0021-8979, 1089-7550},
url = {http://scitation.aip.org/content/aip/journal/jap/101/3/10.1063/1.2433751},
author = {Zeng, Gehong and Zide, Joshua M. O. and Kim, Woochul and Bowers, John E. and Gossard, Arthur C. and Bian, Zhixi and Zhang, Yan and Shakouri, Ali and Singer, Suzanne L. and Majumdar, Arun}
}

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The microheater creates a local temperature difference, and the cross-plane Seebeck coefficients of the superlattices are determined by a combination of experimental measurements and finite element simulations. The cross-plane Seebeck coefficients are compared to the in-plane Seebeck coefficients and a significant increase in the cross-plane Seebeck coefficient over the in-plane Seebeck coefficient is observed. Differences between cross-plane and in-plane Seebeck coefficients decrease as the carrier concentration increases, which is indicative of heterostructurethermionic emission in the cross-plane direction.},\n\tkeywords = {Carrier density, Conduction bands, III-V semiconductors, Superlattices, Thermal conductivity},\n\tisbn = {0021-8979, 1089-7550},\n\turl = {http://scitation.aip.org/content/aip/journal/jap/101/3/10.1063/1.2433751},\n\tauthor = {Zeng, Gehong and Zide, Joshua M. O. and Kim, Woochul and Bowers, John E. and Gossard, Arthur C. and Bian, Zhixi and Zhang, Yan and Shakouri, Ali and Singer, Suzanne L. and Majumdar, Arun}\n}\n","author_short":["Zeng, G.","Zide, J. M. O.","Kim, W.","Bowers, J. E.","Gossard, A. C.","Bian, Z.","Zhang, Y.","Shakouri, A.","Singer, S. 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