Characterization of heat transfer along a silicon nanowire using thermoreflectance technique. Zhang, Y.; Christofferson, J.; Shakouri, A.; Li, D.; Majumdar, A.; Wu, Y.; Fan, R.; and Yang, P. IEEE Transactions on Nanotechnology, 5:67-74, January 2006, 2006.
abstract   bibtex   
We studied heat transfer along a silicon nanowire suspended between two thin-film heaters using a thermoreflectance imaging technique. The thermoreflectance imaging system achieved submicrometer spatial resolution and 0.1\textdegreeC temperature resolution using visible light. The temperature difference across the nanowire was measured, and then its thermal resistance was calculated. Knowing the dimension of the nanowire (115 nm in width and 3.9 μm in length), we calculated the thermal conductivity of the sample, which is 46 W/mK. Thermal conductivity decreases with decreasing wire size. For a 115-nm-wide silicon nanowire, the thermal conductivity is only one-third of the bulk value. In addition, the transient response of the thin-film heaters was also examined using three-dimensional thermal models by the ANSYS program. The simulated thermal map matches well with the experimental thermoreflectance results.
@article {665,
	title = {Characterization of heat transfer along a silicon nanowire using thermoreflectance technique},
	journal = {IEEE Transactions on Nanotechnology},
	volume = {5},
	year = {2006},
	month = {January 2006},
	pages = {67-74},
	abstract = {We studied heat transfer along a silicon nanowire suspended between two thin-film heaters using a thermoreflectance imaging technique. The thermoreflectance imaging system achieved submicrometer spatial resolution and 0.1{\textdegree}C temperature resolution using visible light. The temperature difference across the nanowire was measured, and then its thermal resistance was calculated. Knowing the dimension of the nanowire (115 nm in width and 3.9 μm in length), we calculated the thermal conductivity of the sample, which is 46 W/mK. Thermal conductivity decreases with decreasing wire size. For a 115-nm-wide silicon nanowire, the thermal conductivity is only one-third of the bulk value. In addition, the transient response of the thin-film heaters was also examined using three-dimensional thermal models by the ANSYS program. The simulated thermal map matches well with the experimental thermoreflectance results.},
	keywords = {0.1 C, 115 nm, 3.9 micron, ANSYS program, Electrical resistance measurement, elemental semiconductors, Heat transfer, heat transfer characterization, Image resolution, Nanowires, Semiconductor thin films, Si, Si nanowire, silicon, silicon nanowire, simulated thermal map, Spatial resolution, Temperature, Thermal conductivity, thermal resistance, thermoreflectance, Thermoreflectance imaging, thermoreflectance imaging technique, thin-film heaters, three-dimensional thermal models, visible light},
	isbn = {1536-125X},
	author = {Zhang, Yan and Christofferson, J. and Shakouri, Ali and Li, Deyu and Majumdar, A. and Wu, Yiying and Fan, Rong and Yang, Peidong}
}
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