$F$ Band Distributed Active Transformer Power Amplifier Achieving 12 Gb/s in InP 130-nm HBT. Zhang, L., Iyer, V., Sheth, J., Xie, L., Weikle, R. M., & Bowers, S. M. IEEE Transactions on Microwave Theory and Techniques, 2023.
$F$ Band Distributed Active Transformer Power Amplifier Achieving 12 Gb/s in InP 130-nm HBT [link]Paper  bibtex   
@article{479,
  author = {Linsheng Zhang and Vinay Iyer and Jay Sheth and Lixue Xie and Robert M. Weikle and Steven M. Bowers},
  title = {$F$ Band Distributed Active Transformer Power Amplifier Achieving 12 Gb/s in InP 130-nm HBT},
  year = {2023},
  journal = {IEEE Transactions on Microwave Theory and Techniques},
  url = {https://doi.org/10.1109/tmtt.2023.3314078}
}

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