Physical model of the impact of metal grain work function variability on emerging dual metal gate MOSFETs and its implication for SRAM reliability

Physical model of the impact of metal grain work function variability on emerging dual metal gate MOSFETs and its implication for SRAM reliability. Zhang, X., Li, J., Grubbs, M., Deal, M., Magyari-Köpe, B., Clemens, B. M., & Nishi, Y. In 2009 IEEE International Electron Devices Meeting (<strong>IEDM</strong>), pages 1–4, Dec, 2009.
doi bibtex

@INPROCEEDINGS{zhang2009iedm, 
author={Xiao Zhang and Jing Li and M. Grubbs and M. Deal and B. Magyari-Köpe and B. M. Clemens and Y. Nishi}, 
booktitle={2009 IEEE International Electron Devices Meeting (<strong>IEDM</strong>)}, 
title={Physical model of the impact of metal grain work function variability on emerging dual metal gate {MOSFETs} and its implication for {SRAM} reliability}, 
year={2009}, 
date={2009-12},
volume={}, 
number={}, 
pages={1--4}, 
keywords={conference, MOS integrated circuits,MOSFET,SRAM chips,integrated circuit metallisation,integrated circuit reliability,work function,SRAM reliability,dual metal gate MOSFET,grain orientation difference,metal grain work function variability,polycrystalline metal gate,size 22 nm,Charge carrier density,Circuit analysis,Electrodes,Fluctuations,High K dielectric materials,MOSFETs,Predictive models,Random access memory,Resource description framework,Semiconductor process modeling}, 
doi={10.1109/IEDM.2009.5424420}, 
ISSN={0163-1918}, 
month={Dec},
%note={(Acceptance Rate*: <u>33\%</u>)},
}

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