Theory and Experiments of the Impact of Work-Function Variability on Threshold Voltage Variability in MOS Devices

Theory and Experiments of the Impact of Work-Function Variability on Threshold Voltage Variability in MOS Devices. Zhang, X., Mitard, J., Ragnarsson, L., Hoffmann, T., Deal, M., Grubbs, M. E., Li, J., Magyari-Kope, B., Clemens, B. M., & Nishi, Y. IEEE Transactions on Electron Devices, 59(11):3124–3126, Nov, 2012.
doi bibtex

@ARTICLE{zhang2012TED, 
author={Xiao Zhang and Jerome Mitard and Lars-Ake Ragnarsson and Tomas Hoffmann and Michael Deal and Melody E. Grubbs and Jing Li and Blanka Magyari-Kope and Bruce M. Clemens and Yoshio Nishi}, 
journal={IEEE Transactions on Electron Devices}, 
title={Theory and Experiments of the Impact of Work-Function Variability on Threshold Voltage Variability in {MOS} Devices}, 
year={2012}, 
volume={59}, 
number={11}, 
pages={3124--3126}, 
keywords={journal, MOSFET,failure analysis,probability,random-access storage,semiconductor device models,semiconductor device reliability,MOS devices,MOSFET,WFV,grain orientation,polycrystalline metal gate,random dopant fluctuation,size 22 nm,static RAM failure probability,threshold voltage variability,work-function variability,Integrated circuit modeling,Logic gates,Random access memory,Resource description framework,Semiconductor device modeling,MOSFETS,Metal gate,variability,work function (WF)}, 
doi={10.1109/TED.2012.2212021}, 
ISSN={0018-9383}, 
month={Nov},
}

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