Charge Trapping in Irradiated 3D Devices and ICs (Invited). Zhang, E. X., Toguchi, S., Guo, Z. X., Alles, M. L., Schrimpf, R. D., & Fleetwood, D. M. In IRPS, pages 10, 2024. IEEE.
Charge Trapping in Irradiated 3D Devices and ICs (Invited). [link]Link  Charge Trapping in Irradiated 3D Devices and ICs (Invited). [link]Paper  bibtex   
@inproceedings{conf/irps/ZhangTGASF24,
  added-at = {2024-05-29T00:00:00.000+0200},
  author = {Zhang, En Xia and Toguchi, Shintaro and Guo, Zi Xiang and Alles, Michael L. and Schrimpf, Ronald D. and Fleetwood, Daniel M.},
  biburl = {https://www.bibsonomy.org/bibtex/2269237f1f145201ce1e37ba1de4ba52c/dblp},
  booktitle = {IRPS},
  crossref = {conf/irps/2024},
  ee = {https://doi.org/10.1109/IRPS48228.2024.10529460},
  interhash = {b86196b118d0999c027f4c5fae3c24af},
  intrahash = {269237f1f145201ce1e37ba1de4ba52c},
  isbn = {979-8-3503-6976-2},
  keywords = {dblp},
  pages = 10,
  publisher = {IEEE},
  timestamp = {2024-06-03T07:16:33.000+0200},
  title = {Charge Trapping in Irradiated 3D Devices and ICs (Invited).},
  url = {http://dblp.uni-trier.de/db/conf/irps/irps2024.html#ZhangTGASF24},
  year = 2024
}

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