Modification of spontaneous emission from CdSe/CdS quantum dots in the presence of a semiconductor interface. Zhang, J., Wang, X., & Xiao, M. Optics Letters, 27(14):1253--1255, July, 2002.
Modification of spontaneous emission from CdSe/CdS quantum dots in the presence of a semiconductor interface [link]Paper  doi  abstract   bibtex   
The spontaneous-emission lifetime of CdSe/CdS core–shell quantum dots was studied as a function of the distance between the dots and a polished Si surface. The experimental results reveal a significant modification of the spontaneous-emission rate of the quantum dots by the Si surface.
@article{zhang_modification_2002,
	title = {Modification of spontaneous emission from {CdSe}/{CdS} quantum dots in the presence of a semiconductor interface},
	volume = {27},
	url = {http://ol.osa.org/abstract.cfm?URI=ol-27-14-1253},
	doi = {10.1364/OL.27.001253},
	abstract = {The spontaneous-emission lifetime of CdSe/CdS core–shell quantum dots was studied as a function of the distance between the dots and a polished Si surface. The experimental results reveal a significant modification of the spontaneous-emission rate of the quantum dots by the Si surface.},
	number = {14},
	urldate = {2013-01-15TZ},
	journal = {Optics Letters},
	author = {Zhang, Jia-Yu and Wang, Xiao-Yong and Xiao, Min},
	month = jul,
	year = {2002},
	keywords = {Semiconductor materials, Spectroscopy, semiconductors, Spectroscopy, time-resolved},
	pages = {1253--1255}
}

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