Recent progress in RRAM technology: From compact models to applications (<strong>invited</strong>). Zha<sup>S</sup>, Y., Wei, Z., & Li, J. In 2017 China Semiconductor Technology International Conference (CSTIC), pages 1–4, March, 2017.
doi  bibtex   
@INPROCEEDINGS{zha2017CSTIC, 
author={Yue Zha<sup>S</sup> and Zhiqiang Wei and Jing Li}, 
booktitle={2017 China Semiconductor Technology International Conference (CSTIC)}, 
title={Recent progress in {RRAM} technology: From compact models to applications (<strong>invited</strong>)}, 
year={2017}, 
volume={}, 
number={},
date={2017-03-12},
pages={1--4}, 
keywords={conference, integrated circuit modelling,product development,resistive RAM,IV characteristics,RRAM technology,SCM,commercialization progress,compact model,drop-in replacement,embedded memory,essential electrical-chemical-thermal properties,nonVon Neumann architecture,product development,standalone memory,storage class memory,switching dynamics,Computational modeling,Computer architecture,Hidden Markov models,Mathematical model,Random access memory,Resistance,Switches}, 
doi={10.1109/CSTIC.2017.7919731}, 
ISSN={}, 
month={March},
}

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